general purpose transistors npn bipolar junction transistor (complementary pnp device: mmbt2131t1/t3) maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit collectoremitter voltage v ceo 30 v collectorbase voltage v cbo 40 v emitterbase voltage v ebo 5.0 v collector current i c 700 ma base current i b 350 ma total power dissipation @ t c = 25 c total power dissipation @ t c = 85 c thermal resistance junction to ambient (1) p d p d r ja 342 178 366 mw mw c/w total power dissipation @ t c = 25 c total power dissipation @ t c = 85 c thermal resistance junction to ambient (2) p d p d r ja 665 346 188 mw mw c/w operating and storage temperature range t j , t stg 55 to +150 c electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectorbase breakdown voltage (i c = 100 adc) v (br)cbo 40 vdc collectoremitter breakdown voltage (i c = 10 madc) v (br)ceo 30 vdc emitterbase breakdown voltage (i e = 100 adc) v (br)ebo 5.0 vdc collector cutoff current (v cb = 25 vdc, i e = 0 adc) (v cb = 25 vdc, i e = 0 adc, t a = 125 c) i cbo 1.0 10 adc emitter cutoff current (v eb = 5.0 vdc, i c = 0 adc) i ebo 10 adc on characteristics dc current gain (v ce = 3.0 vdc, i c = 100 madc) h fe 150 vdc collectoremitter saturation voltage (i c = 500 madc, i b = 50 madc) v ce(sat) 0.25 vdc collectoremitter saturation voltage (i c = 700 madc, i b = 70 madc) v ce(sat) 0.4 vdc baseemitter saturation voltage (i c = 700 madc, i b = 70 madc) v be(sat) 1.1 vdc collectoremitter saturation voltage (i c = 700 madc, v ce = 1.0 vdc) v be(on) 1.0 vdc 1. minimum fr4 or g10 pcb, operating to steady state. 2. mounted onto a 2 square fr4 board (1 sq. 2 oz cu 0.06 thick single sided), operating to steady state. on semiconductor ? semiconductor components industries, llc, 2001 june, 2001 rev. 1 1 publication order number: MMBT2132t1/d MMBT2132t1 MMBT2132t3 1 2 4 case 318f03, style 2 sc59 6 lead 0.7 amperes 30 volts v (br)ceo 342 mw collector pins 2, 5 base pin 6 emitter pin 3 3 npn 5 6
MMBT2132t1 MMBT2132t3 http://onsemi.com 2 figure 1. collector saturation region figure 2. collector saturation region figure 3. dc current gain figure 4. aono voltages figure 5. aono voltages figure 6. collectoremitter saturation voltage 0.1 0.000001 i b , base current (a) 0.3 0.2 1.0 0.01 i c , collector current (a) 1000 100 i c , collector current (a) 0.001 1.0 0.1 0.001 0.01 0.001 i c , collector current (a) 1.0 0.1 0.01 i c , collector current (a) 0.01 0.16 0.12 0.04 0 0.1 0.01 v ce(sat) , collector-emitter voltage (v) h voltage (v) 0.1 0 0.0001 0.001 0.01 0.1 0.1 1.0 voltage (v) 0.1 1.0 1.0 0.08 v ce(sat) , voltage (v) i c = 1.0 ma 0.7 a 0.00001 0.1 0.000001 i b , base current (a) 0.1 v ce(sat) , collector-emitter voltage (v) 0 0.0001 0.001 0.01 i c = 1.0 ma 0.00001 , dc current gain fe v ce = 3.0 v 10 ma 0.1 a 0.5 a 10 ma 0.1 a -40 c 150 c 25 c v be(sat) v ce(sat) i c /i b = 10 v be(sat) v ce(sat) i c /i b = 100 i c /i b = 10 t = 85 c 25 c 0 c 0.01
MMBT2132t1 MMBT2132t3 http://onsemi.com 3 0.5 0.2 0.1 0.05 0.02 0.01 figure 7. collectoremitter saturation voltage figure 8. v be(on) voltage figure 9. thermal response curve 1.0 0.01 i c , collector current (a) 0.2 0.1 0.01 0.0001 time (sec) 1.0 0.01 v ce(sat) , voltage (v) 0.05 0 0.001 1.0 0.0001 i c , collector current (a) 1.0 0.75 0.5 v be(on) , voltage (v) 0.25 0 0.001 0.01 v ce = 1.0 v transient thermal resistance (normalized) 0.15 0.1 0.1 0.1 1.0 10 100 i c /i b = 100 t = 85 c 25 c 0 c 150 c 25 c -40 c d curves apply for power pulse train shown read time at t 1 (see an569) z q ja (t) = r(t) r q ja t j(pk) - t a = p (pk) z q ja (t) duty cycle, d = t 1 /t 2 t 1 t 2 p (pk) 0.1
MMBT2132t1 MMBT2132t3 http://onsemi.com 4 package dimensions case 318f03 issue f sc74 23 4 5 6 a l 1 s g d b h c 0.05 (0.002) dim min max min max millimeters inches a 0.1142 0.1220 2.90 3.10 b 0.0512 0.0669 1.30 1.70 c 0.0354 0.0433 0.90 1.10 d 0.0098 0.0197 0.25 0.50 g 0.0335 0.0413 0.85 1.05 h 0.0005 0.0040 0.013 0.100 j 0.0040 0.0102 0.10 0.26 k 0.0079 0.0236 0.20 0.60 l 0.0493 0.0649 1.25 1.65 m 0 10 0 10 s 0.0985 0.1181 2.50 3.00 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318f-01 and -02 obsolete. new standard 318f-03. m j k style 2: pin 1. no connection 2. collector 3. emitter 4. no connection 5. collector 6. base on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. MMBT2132t1/d thermal clad is a trademark of the bergquist company. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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